IRFH8307TRPBF

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Number Of Channels

1

Power Dissipation Max

3.6W Ta 156W Tc

Terminal Sayısı

5

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount

Continuous Drain Current Id

100A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rise Time

30ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

13 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Case Connection

DRAIN

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

7200pF @ 15V

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

400A

Operating Mode

ENHANCEMENT MODE

Terminal Formu

NO LEAD

ECCN Kodu

EAR99

Pin Sayısı

8

Current Continuous Drain Id25

42A Ta 100A Tc

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

1.3m Ω @ 50A, 10V

Drain To Source Breakdown Voltage

30V

Threshold Voltage

1.8V

Transistor Element Material

SILICON

Power Dissipation

3.6W

Seri

HEXFET®, StrongIRFET™

Fet Type

N-Channel

Vgs Max

±20V

Avalanche Energy Rating Eas

420 mJ

Yayın Yılı

2013

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

31 ns

Drain Currentmax Abs Id

42A

Terminal Pozisyonu

DUAL

Kurşunsuz

Lead Free