IRFH7934TRPBF

Teknik Özellikler

Dual Supply Voltage

30V

Vgsth Max Id

2.35V @ 50μA

Uzunluk

5.2324mm

Gate Charge Qg Max Vgs

30nC @ 4.5V

Turn On Delay Time

12 ns

Jesd30 Code

R-PDSO-N3

Kılıf / Paket

8-PowerTDFN

Fet Type

N-Channel

Avalanche Energy Rating Eas

97 mJ

Vgs Max

±20V

Yayın Yılı

2009

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Nominal Vgs

1.8 V

Turn Off Delay Time

14 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Abs Id

76A

Terminal Pozisyonu

DUAL

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Current Continuous Drain Id25

24A Ta 76A Tc

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Rds On Max Id Vgs

3.5m Ω @ 24A, 10V

Drain To Source Breakdown Voltage

30V

Transistor Element Material

SILICON

Seri

HEXFET®

Terminal

SMD/SMT

Genişlik

6.1468mm

Power Dissipation

3.1W

Power Dissipation Max

3.1W Ta

Terminal Sayısı

3

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Rise Time

16ns