IRFH7004TRPBF

Teknik Özellikler

Kılıf / Paket

8-VQFN Exposed Pad

Transistor Element Material

SILICON

Threshold Voltage

3V

Genişlik

5mm

Power Dissipation

156W

Seri

HEXFET®, StrongIRFET™

Pin Sayısı

5

Turn On Delay Time

15 ns

Gate Charge Qg Max Vgs

194nC @ 10V

Ds Breakdown Voltagemin

40V

Uzunluk

6mm

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

40V

ECCN Kodu

EAR99

Vgsth Max Id

3.9V @ 150μA

Rds On Max Id Vgs

1.4m Ω @ 100A, 10V

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

100A Tc

Input Capacitance Ciss Max Vds

6419pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Terminal Pozisyonu

DUAL

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

6V 10V

Transistor Application

SWITCHING

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Lead Free

Reach Svhc

No SVHC

Number Of Elements

1

Continuous Drain Current Id

100A

Vgs Max

±20V

Yükseklik

850μm

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

51ns

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Power Dissipation Max

156W Tc

Fet Type

N-Channel

Terminal Sayısı

5