IRFH5406TRPBF

Teknik Özellikler

Uzunluk

5.9944mm

Vgsth Max Id

4V @ 50μA

Turn On Delay Time

12 ns

Gate Charge Qg Max Vgs

35nC @ 10V

Jesd30 Code

R-PDSO-N5

Direnç

14.4MOhm

Kılıf / Paket

8-PowerVDFN

Fet Type

N-Channel

Vgs Max

±20V

Avalanche Energy Rating Eas

45 mJ

Nominal Vgs

2 V

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2011

Turn Off Delay Time

5.4 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

DUAL

Manufacturer Package Identifier

IRFH5406TRPBF

Kurşunsuz

Lead Free

Number Of Elements

1

Transistor Application

SWITCHING

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Pin Sayısı

8

Terminal Kaplaması

Matte Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

11A Ta 40A Tc

Drain To Source Breakdown Voltage

60V

Max Junction Temperature Tj

150°C

Rds On Max Id Vgs

14.4m Ω @ 24A, 10V

Radyasyon Dayanımı

No

Threshold Voltage

4V

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Power Dissipation

3.6W

Genişlik

5mm

Seri

HEXFET®

Gate To Source Voltage Vgs

20V