IRFH5302TRPBF

Teknik Özellikler

Current Continuous Drain Id25

32A Ta 100A Tc

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

2.1m Ω @ 50A, 10V

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Uzunluk

5.9944mm

Vgsth Max Id

2.35V @ 100μA

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

76nC @ 10V

Pin Sayısı

8

Turn On Delay Time

18 ns

Genişlik

5mm

Power Dissipation

100W

Seri

HEXFET®

Jesd30 Code

R-PDSO-N5

Direnç

2.1MOhm

Transistor Element Material

SILICON

Kılıf / Paket

8-PowerVDFN

Montaj Tipi

Surface Mount

Yayın Yılı

2009

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

1.8 V

Fall Time Typ

18 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

22 ns

Gate To Source Voltage Vgs

20V

Terminal Sayısı

5

Fet Type

N-Channel

Power Dissipation Max

3.6W Ta 100W Tc

Montaj

Surface Mount

Continuous Drain Current Id

32A

Vgs Max

±20V

Yükseklik

838.2μm

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

51ns

Kurşunsuz

Lead Free

Reach Svhc

No SVHC

Number Of Elements

1

Pulsed Drain Currentmax Idm

400A