IRFH5250DTRPBF

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Terminal Sayısı

5

Power Dissipation Max

3.6W Ta 156W Tc

Montaj

Surface Mount

Continuous Drain Current Id

100A

Yükseklik

838.2μm

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

72ns

Fall Time Typ

24 ns

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

6115pF @ 13V

Pulsed Drain Currentmax Idm

400A

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

8

Current Continuous Drain Id25

40A Ta 100A Tc

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

25V

Rds On Max Id Vgs

1.4m Ω @ 50A, 10V

Radyasyon Dayanımı

No

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Power Dissipation

3.6W

Genişlik

5mm

Seri

HEXFET®

Fet Type

N-Channel

Vgs Max

±20V

Avalanche Energy Rating Eas

470 mJ

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2010

Turn Off Delay Time

23 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Abs Id

40A

Terminal Pozisyonu

DUAL

Kurşunsuz

Lead Free

Number Of Elements

1