IRFH5206TR2PBF

Teknik Özellikler

Seri

HEXFET®

Power Dissipation

100W

Genişlik

5mm

Drain To Source Resistance

6.7mOhm

Threshold Voltage

4V

Kılıf / Paket

8-PowerVDFN

Tedarikçi Cihaz Paketi

8-PQFN (5x6)

Rds On Max

6.7 mΩ

Current Continuous Drain Id25

16A Ta 89A Tc

RoHS Durumu

RoHS Compliant

Radyasyon Dayanımı

No

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Breakdown Voltage

60V

Rds On Max Id Vgs

6.7mOhm @ 50A, 10V

Vgsth Max Id

4V @ 100μA

Drain To Source Voltage Vdss

60V

Uzunluk

5.9944mm

Gate Charge Qg Max Vgs

60nC @ 10V

Turn On Delay Time

6.4 ns

Pin Sayısı

8

Recovery Time

39 ns

Number Of Elements

1

Max Power Dissipation

3.6W

Reach Svhc

No SVHC

Ambalaj

Cut Tape (CT)

Parça Durumu

Obsolete

Input Capacitance

2.49nF

Min. Çalışma Sıcaklığı

-55°C

Input Capacitance Ciss Max Vds

2490pF @ 25V

Fall Time Typ

8.2 ns

Montaj Tipi

Surface Mount

Yayın Yılı

2010

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

4 V

Turn Off Delay Time

22 ns

Element Configuration

Single

Fet Type

N-Channel

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Rise Time

11ns