IRFH5110TR2PBF

Teknik Özellikler

Radyasyon Dayanımı

No

Maks. Çalışma Sıcaklığı

150°C

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

12.4mOhm @ 37A, 10V

Rds On Max

12.4 mΩ

RoHS Durumu

RoHS Compliant

Current Continuous Drain Id25

11A Ta 63A Tc

Turn On Delay Time

7.8 ns

Pin Sayısı

8

Gate Charge Qg Max Vgs

72nC @ 10V

Vgsth Max Id

4V @ 100μA

Uzunluk

5.9944mm

Drain To Source Voltage Vdss

100V

Seri

HEXFET®

Power Dissipation

114W

Genişlik

5mm

Kılıf / Paket

8-PowerVDFN

Tedarikçi Cihaz Paketi

8-PQFN (5x6)

Drain To Source Resistance

12.4mOhm

Threshold Voltage

4V

Element Configuration

Single

Turn Off Delay Time

22 ns

Fall Time Typ

6.4 ns

Nominal Vgs

4 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2010

Montaj Tipi

Surface Mount

Rise Time

9.6ns

Yükseklik

838.2μm

Continuous Drain Current Id

63A

Montaj

Surface Mount

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Input Capacitance

3.152nF

Ambalaj

Cut Tape (CT)

Parça Durumu

Obsolete

Min. Çalışma Sıcaklığı

-55°C

Max Power Dissipation

3.6W

Number Of Elements

1

Recovery Time

51 ns