IRFBA90N20DPBF

Teknik Özellikler

Montaj Tipi

Through Hole

Fet Type

N-Channel

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Vgs Max

±30V

Fabrika Tedarik Süresi

25 Weeks

Fall Time Typ

77 ns

ECCN Kodu

EAR99

Genişlik

5mm

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

Current Continuous Drain Id25

98A Tc

Rds On Max Id Vgs

23m Ω @ 59A, 10V

Transistor Application

SWITCHING

Number Of Elements

1

Ambalaj

Tube

Vgsth Max Id

5V @ 250μA

Seri

HEXFET®

Kılıf / Paket

TO-273AA

Direnç

23Ohm

Drain To Source Breakdown Voltage

200V

Gate Charge Qg Max Vgs

240nC @ 10V

Turn Off Delay Time

39 ns

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

960 mJ

Element Configuration

Single

Turn On Delay Time

23 ns

Yükseklik

15.0114mm

Case Connection

DRAIN

Uzunluk

10.9982mm

Dual Supply Voltage

200V

Additional Feature

AVALANCHE RATED

Power Dissipation

650W

Drain Currentmax Abs Id

95A

Montaj

Through Hole

Rise Time

160ns

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

98A

Power Dissipation Max

650W Tc