IRFBA1404PPBF

Teknik Özellikler

Uzunluk

10.9982mm

Avalanche Energy Rating Eas

480 mJ

Drive Voltage Max Rds On Min Rds On

10V

Yükseklik

15mm

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

17 ns

Power Dissipation

300W

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Rise Time

140ns

Montaj

Through Hole

Pin Sayısı

3

Continuous Drain Current Id

206A

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

95A

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Voltage Rated Dc

40V

Çalışma Sıcaklığı

-40°C~175°C TJ

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

7360pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

300W Tc

Yayın Yılı

2004

Akım Değeri

206A

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Fet Type

N-Channel

Montaj Tipi

Through Hole

Genişlik

5mm

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

26 ns

Rds On Max Id Vgs

3.7m Ω @ 95A, 10V

Current Continuous Drain Id25

206A Tc

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

650A

Radyasyon Dayanımı

No