IRFB7730PBF

Teknik Özellikler

Max Junction Temperature Tj

175°C

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3

Gate To Source Voltage Vgs

20V

Drain To Source Breakdown Voltage

75V

Input Capacitance Ciss Max Vds

13660pF @ 25V

Turn Off Delay Time

180 ns

Gate Charge Qg Max Vgs

407nC @ 10V

Number Of Channels

1

Power Dissipation Max

375W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Reach Svhc

No SVHC

Threshold Voltage

2.1V

Vgsth Max Id

3.7V @ 250μA

Yayın Yılı

2001

Seri

HEXFET®

Weight

6.000006g

Montaj

Through Hole

Rise Time

120ns

Rds On Max Id Vgs

2.6m Ω @ 100A, 10V

Current Continuous Drain Id25

195A Tc

Continuous Drain Current Id

195A

Pin Sayısı

3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Power Dissipation

375W

Kurşunsuz

Lead Free

Genişlik

4.83mm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

115 ns

Parça Durumu

Active

Uzunluk

10.67mm

Vgs Max

±20V

Montaj Tipi

Through Hole

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

6V 10V

Element Configuration

Single