IRFB7546PBF

Teknik Özellikler

Turn On Delay Time

11 ns

Element Configuration

Single

Yükseklik

16.51mm

Montaj Tipi

Through Hole

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

6V 10V

Vgs Max

±20V

Uzunluk

10.67mm

Transistor Element Material

SILICON

Parça Durumu

Active

Fall Time Typ

34 ns

Fabrika Tedarik Süresi

12 Weeks

Jedec95 Code

TO-220AB

Power Dissipation

99W

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

Genişlik

4.83mm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

75A

Pin Sayısı

3

Transistor Application

SWITCHING

Rise Time

51ns

Montaj

Through Hole

Rds On Max Id Vgs

7.3m Ω @ 45A, 10V

Current Continuous Drain Id25

75A Tc

Vgsth Max Id

3.7V @ 100μA

Threshold Voltage

3.7V

Seri

HEXFET®, StrongIRFET™

Weight

6.000006g

Yayın Yılı

2013

Number Of Elements

1

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

99W Tc

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

3000pF @ 25V

Drain To Source Breakdown Voltage

60V

Gate To Source Voltage Vgs

20V