IRFB7540PBF

Teknik Özellikler

Number Of Channels

1

Turn Off Delay Time

58 ns

Gate Charge Qg Max Vgs

130nC @ 10V

Input Capacitance Ciss Max Vds

4555pF @ 25V

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

Kılıf / Paket

TO-220-3

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Weight

6.000006g

Seri

HEXFET®, StrongIRFET™

Yayın Yılı

2008

Drain To Source Voltage Vdss

60V

Vgsth Max Id

3.7V @ 100μA

Threshold Voltage

3.7V

Reach Svhc

No SVHC

Number Of Elements

1

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

160W Tc

Continuous Drain Current Id

110A

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

60V

Transistor Application

SWITCHING

Current Continuous Drain Id25

110A Tc

Montaj

Through Hole

Rise Time

76ns

Rds On Max Id Vgs

5.1m Ω @ 65A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

Genişlik

4.83mm

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fall Time Typ

56 ns

Fabrika Tedarik Süresi

12 Weeks

Vgs Max

±20V

Uzunluk

10.67mm

Transistor Element Material

SILICON