IRFB7534PBF

Teknik Özellikler

Pulsed Drain Currentmax Idm

944A

Ds Breakdown Voltagemin

60V

Transistor Application

SWITCHING

Current Continuous Drain Id25

195A Tc

Rds On Max Id Vgs

2.4m Ω @ 100A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Channels

1

Turn Off Delay Time

118 ns

Gate Charge Qg Max Vgs

279nC @ 10V

Kılıf / Paket

TO-220-3

Seri

HEXFET®, StrongIRFET™

Vgsth Max Id

3.7V @ 250μA

Ambalaj

Tube

Number Of Elements

1

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Fet Type

N-Channel

Montaj Tipi

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Genişlik

4.83mm

Drainsource On Resistancemax

0.0024Ohm

Kurşunsuz

Lead Free

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fall Time Typ

93 ns

Fabrika Tedarik Süresi

12 Weeks

Pin Sayısı

3

Continuous Drain Current Id

195A

Operating Mode

ENHANCEMENT MODE

Rise Time

134ns

Montaj

Through Hole

Input Capacitance Ciss Max Vds

10034pF @ 25V

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Weight

6.000006g

Yayın Yılı

2013

Threshold Voltage

3.7V