IRFB7530PBF

Teknik Özellikler

Current Continuous Drain Id25

195A Tc

Rds On Max Id Vgs

2m Ω @ 100A, 10V

Rise Time

141ns

Montaj

Through Hole

Transistor Application

SWITCHING

Continuous Drain Current Id

195A

Pin Sayısı

3

Pulsed Drain Currentmax Idm

760A

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

Turn Off Delay Time

172 ns

Gate Charge Qg Max Vgs

411nC @ 10V

Gate To Source Voltage Vgs

20V

Drain To Source Breakdown Voltage

60V

Input Capacitance Ciss Max Vds

13703pF @ 25V

Reach Svhc

No SVHC

Power Dissipation Max

375W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Tube

Yayın Yılı

2013

Weight

6.000006g

Seri

HEXFET®, StrongIRFET™

Threshold Voltage

3.7V

Vgsth Max Id

3.7V @ 250μA

Parça Durumu

Active

Transistor Element Material

SILICON

Uzunluk

10.67mm

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

6V 10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

1025 mJ

Montaj Tipi

Through Hole

Yükseklik

16.51mm

Element Configuration

Single

Turn On Delay Time

52 ns