IRFB7446PBF

Teknik Özellikler

Current Continuous Drain Id25

120A Tc

Rds On Max Id Vgs

3.3m Ω @ 70A, 10V

Rise Time

34ns

Montaj

Through Hole

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

120A

Pulsed Drain Currentmax Idm

492A

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

3

Kılıf / Paket

TO-220-3

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Drain To Source Breakdown Voltage

40V

Input Capacitance Ciss Max Vds

3183pF @ 25V

Turn Off Delay Time

33 ns

Gate Charge Qg Max Vgs

93nC @ 10V

Power Dissipation Max

99W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Tube

Reach Svhc

No SVHC

Recovery Time

22 ns

Vgsth Max Id

3.9V @ 100μA

Threshold Voltage

3V

Yayın Yılı

2008

Seri

HEXFET®, StrongIRFET™

Nominal Vgs

3 V

Parça Durumu

Active

Transistor Element Material

SILICON

Uzunluk

10.67mm

Vgs Max

±20V

Montaj Tipi

Through Hole

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

6V 10V

Element Configuration

Single

Turn On Delay Time

11 ns

Yükseklik

16.51mm