IRFB61N15DPBF

Teknik Özellikler

Input Capacitance Ciss Max Vds

3470pF @ 25V

Gate To Source Voltage Vgs

16V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

Voltage Rated Dc

150V

Nominal Vgs

5.5 V

Yayın Yılı

2004

Akım Değeri

60A

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.4W Ta 330W Tc

Pin Sayısı

3

Continuous Drain Current Id

60A

Operating Mode

ENHANCEMENT MODE

Rise Time

110ns

Montaj

Through Hole

Power Dissipation

330W

Dual Supply Voltage

150V

Uzunluk

10.5156mm

Case Connection

DRAIN

Yükseklik

15.24mm

Turn On Delay Time

18 ns

Element Configuration

Single

Avalanche Energy Rating Eas

520 mJ

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

140nC @ 10V

Turn Off Delay Time

28 ns

Drain To Source Breakdown Voltage

150V

Direnç

32Ohm

Kılıf / Paket

TO-220-3

Seri

HEXFET®

Vgsth Max Id

5.5V @ 250μA

Ambalaj

Tube

Number Of Elements

1

Pulsed Drain Currentmax Idm

250A

Transistor Application

SWITCHING

Rds On Max Id Vgs

32m Ω @ 36A, 10V

Current Continuous Drain Id25

60A Tc

Radyasyon Dayanımı

No