IRFB52N15DPBF

Teknik Özellikler

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Genişlik

4.82mm

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

25 ns

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±30V

Montaj Tipi

Through Hole

Fet Type

N-Channel

Kılıf / Paket

TO-220-3

Direnç

32Ohm

Drain To Source Breakdown Voltage

150V

Gate Charge Qg Max Vgs

89nC @ 10V

Turn Off Delay Time

28 ns

Ambalaj

Tube

Number Of Elements

1

Vgsth Max Id

5V @ 250μA

Seri

HEXFET®

Rds On Max Id Vgs

32m Ω @ 36A, 10V

Current Continuous Drain Id25

51A Tc

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

240A

Radyasyon Dayanımı

No

Power Dissipation

320W

Dual Supply Voltage

150V

Uzunluk

10.66mm

Avalanche Energy Rating Eas

470 mJ

Drive Voltage Max Rds On Min Rds On

10V

Element Configuration

Single

Turn On Delay Time

16 ns

Yükseklik

16.51mm

Case Connection

DRAIN

Voltage Rated Dc

150V

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

2770pF @ 25V