IRFB4620PBF

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

3

Kılıf / Paket

TO-220-3

RoHS Durumu

ROHS3 Compliant

Direnç

72.5MOhm

Gate To Source Voltage Vgs

20V

Drain To Source Breakdown Voltage

200V

Input Capacitance Ciss Max Vds

1710pF @ 50V

Turn Off Delay Time

25.4 ns

Gate Charge Qg Max Vgs

38nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

144W Tc

Ambalaj

Tube

Number Of Elements

1

Reach Svhc

No SVHC

Threshold Voltage

3V

Vgsth Max Id

5V @ 100μA

Yayın Yılı

2008

Nominal Vgs

3 V

Seri

HEXFET®

Rds On Max Id Vgs

72.5m Ω @ 15A, 10V

Rise Time

22.4ns

Montaj

Through Hole

Current Continuous Drain Id25

25A Tc

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

25A

Radyasyon Dayanımı

No

Terminal

Through Hole

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Power Dissipation

144W

Kurşunsuz

Lead Free

Genişlik

4.826mm

Fabrika Tedarik Süresi

12 Weeks

Dual Supply Voltage

200V

Fall Time Typ

14.8 ns

Parça Durumu

Active

Transistor Element Material

SILICON