IRFB4510PBF

Teknik Özellikler

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Through Hole

Case Connection

DRAIN

Yükseklik

9.02mm

Turn On Delay Time

13 ns

Element Configuration

Single

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Uzunluk

10.67mm

Fabrika Tedarik Süresi

12 Weeks

Kurşunsuz

Lead Free

Genişlik

4.83mm

Jedec95 Code

TO-220AB

Power Dissipation

140W

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Transistor Application

SWITCHING

Current Continuous Drain Id25

62A Tc

Rds On Max Id Vgs

13.5m Ω @ 37A, 10V

Montaj

Through Hole

Rise Time

32ns

Pulsed Drain Currentmax Idm

250A

Pin Sayısı

3

Continuous Drain Current Id

62A

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Ambalaj

Tube

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

140W Tc

Seri

HEXFET®

Nominal Vgs

2 V

Yayın Yılı

2008

Vgsth Max Id

4V @ 100μA

Drain To Source Voltage Vdss

100V

Threshold Voltage

2V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3