Adet bazlı fiyat
- 1+ adet$2.55
- 10+ adet$2.40
- 100+ adet$2.27
- 500+ adet$2.14
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- ECCN Kodu
- EAR99
- Power Dissipation
- 230W
- Jedec95 Code
- TO-220AB
- Genişlik
- 4.826mm
- Kurşunsuz
- Lead Free
- Fabrika Tedarik Süresi
- 14 Weeks
- Fall Time Typ
- 57 ns
- Parça Durumu
- Not For New Designs
- Transistor Element Material
- SILICON
- Uzunluk
- 10.668mm
- Vgs Max
- ±20V
- Montaj Tipi
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fet Type
- N-Channel
- Avalanche Energy Rating Eas
- 242 mJ
- Element Configuration
- Single
- Turn On Delay Time
- 16 ns
- Yükseklik
- 16.51mm
- Case Connection
- DRAIN
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-220-3
- Terminal Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Direnç
- 9MOhm
- Input Capacitance Ciss Max Vds
- 4820pF @ 50V
- Drain To Source Breakdown Voltage
- 100V
- Gate Charge Qg Max Vgs
- 120nC @ 10V
- Turn Off Delay Time
- 43 ns
- Power Dissipation Max
- 230W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Ambalaj
- Tube
- Reach Svhc
- No SVHC
- Vgsth Max Id
- 4V @ 150μA
- Yayın Yılı
- 2009
- Nominal Vgs
- 4 V
- Seri
- HEXFET®
- Current Continuous Drain Id25
- 97A Tc
- Rds On Max Id Vgs
- 9m Ω @ 58A, 10V
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