IRFB4410ZGPBF

Teknik Özellikler

ECCN Kodu

EAR99

Power Dissipation

230W

Jedec95 Code

TO-220AB

Genişlik

4.826mm

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

14 Weeks

Fall Time Typ

57 ns

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Uzunluk

10.668mm

Vgs Max

±20V

Montaj Tipi

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

242 mJ

Element Configuration

Single

Turn On Delay Time

16 ns

Yükseklik

16.51mm

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3

Terminal Sayısı

3

Gate To Source Voltage Vgs

20V

Direnç

9MOhm

Input Capacitance Ciss Max Vds

4820pF @ 50V

Drain To Source Breakdown Voltage

100V

Gate Charge Qg Max Vgs

120nC @ 10V

Turn Off Delay Time

43 ns

Power Dissipation Max

230W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Tube

Reach Svhc

No SVHC

Vgsth Max Id

4V @ 150μA

Yayın Yılı

2009

Nominal Vgs

4 V

Seri

HEXFET®

Current Continuous Drain Id25

97A Tc

Rds On Max Id Vgs

9m Ω @ 58A, 10V