IRFB4410PBF

Teknik Özellikler

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

50 ns

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

250

Genişlik

4.82mm

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Reverse Recovery Time

38 ns

Fet Type

N-Channel

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Ambalaj

Tube

Number Of Elements

1

Vgsth Max Id

4V @ 150μA

Seri

HEXFET®

Kılıf / Paket

TO-220-3

Drain To Source Breakdown Voltage

100V

Direnç

10mOhm

Gate Charge Qg Max Vgs

180nC @ 10V

Turn Off Delay Time

55 ns

Tepe Reflow Süresi (maks. sn)

30

Radyasyon Dayanımı

No

Transistor Application

SWITCHING

Rds On Max Id Vgs

10m Ω @ 58A, 10V

Current Continuous Drain Id25

88A Tc

Dual Supply Voltage

100V

Power Dissipation

250W

Avalanche Energy Rating Eas

220 mJ

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

24 ns

Element Configuration

Single

Yükseklik

9.017mm

Uzunluk

10.6426mm

JESD-609 Kodu

e3

Power Dissipation Max

200W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Threshold Voltage

4V