IRFB4229PBF

Teknik Özellikler

Kılıf / Paket

TO-220-3

Direnç

46MOhm

Drain To Source Breakdown Voltage

250V

Gate Charge Qg Max Vgs

110nC @ 10V

Turn Off Delay Time

30 ns

Number Of Elements

1

Ambalaj

Tube

Vgsth Max Id

5V @ 250μA

Seri

HEXFET®

Current Continuous Drain Id25

46A Tc

Rds On Max Id Vgs

46m Ω @ 26A, 10V

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Terminal

Through Hole

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Genişlik

4.82mm

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

21 ns

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±30V

Montaj Tipi

Through Hole

Fet Type

N-Channel

Çalışma Sıcaklığı

-40°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

4560pF @ 25V

Power Dissipation Max

330W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Recovery Time

290 ns

Threshold Voltage

5V

Yayın Yılı

2007

Nominal Vgs

5 V

Montaj

Through Hole

Rise Time

31ns

Operating Mode

ENHANCEMENT MODE