IRFB4227PBF

Teknik Özellikler

Uzunluk

10.6426mm

Case Connection

DRAIN

Yükseklik

19.8mm

Turn On Delay Time

33 ns

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

330W

Dual Supply Voltage

200V

Continuous Drain Current Id

65A

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Rise Time

20ns

Montaj

Through Hole

Input Capacitance Ciss Max Vds

4600pF @ 25V

Gate To Source Voltage Vgs

30V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Çalışma Sıcaklığı

-40°C~175°C TJ

Max Junction Temperature Tj

175°C

Nominal Vgs

5 V

Yayın Yılı

2004

Recovery Time

150 ns

Threshold Voltage

5V

Reach Svhc

No SVHC

Power Dissipation Max

330W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±30V

Transistor Element Material

SILICON

Parça Durumu

Active

Fet Type

N-Channel

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Genişlik

4.82mm

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fall Time Typ

31 ns

Fabrika Tedarik Süresi

12 Weeks

Pulsed Drain Currentmax Idm

260A

Transistor Application

SWITCHING

Rds On Max Id Vgs

24m Ω @ 46A, 10V