IRFB4212PBF

Teknik Özellikler

Terminal

Through Hole

Radyasyon Dayanımı

No

Pulsed Drain Currentmax Idm

57A

Transistor Application

AMPLIFIER

Current Continuous Drain Id25

18A Tc

Rds On Max Id Vgs

72.5m Ω @ 13A, 10V

Vgsth Max Id

5V @ 250μA

Number Of Elements

1

Ambalaj

Tube

Drain To Source Breakdown Voltage

100V

Direnç

72.5mOhm

Gate Charge Qg Max Vgs

23nC @ 10V

Turn Off Delay Time

14 ns

Kılıf / Paket

TO-220-3

Montaj Tipi

Through Hole

Fet Type

N-Channel

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Fall Time Typ

3.9 ns

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Genişlik

4.82mm

Kurşunsuz

Lead Free

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

18A

Montaj

Through Hole

Rise Time

28ns

Akım Değeri

18A

Threshold Voltage

5V

Recovery Time

62 ns

Nominal Vgs

5 V

Yayın Yılı

2005

Power Dissipation Max

60W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

550pF @ 50V

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ