IRFB4127PBF

Teknik Özellikler

Uzunluk

10.668mm

Avalanche Energy Rating Eas

250 mJ

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

17 ns

Element Configuration

Single

Case Connection

DRAIN

Yükseklik

19.8mm

Power Dissipation

375W

Dual Supply Voltage

200V

Rise Time

18ns

Montaj

Through Hole

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

76A

Çalışma Sıcaklığı

-55°C~175°C TJ

Max Junction Temperature Tj

175°C

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

5380pF @ 50V

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

375W Tc

Reach Svhc

No SVHC

Threshold Voltage

5V

Nominal Vgs

5 V

Yayın Yılı

2008

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Montaj Tipi

Through Hole

Fet Type

N-Channel

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Genişlik

4.826mm

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

22 ns

Transistor Application

SWITCHING