IRFB4110PBF

Teknik Özellikler

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Fet Type

N-Channel

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.0045Ohm

Genişlik

4.826mm

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

88 ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

4.5m Ω @ 75A, 10V

Current Continuous Drain Id25

120A Tc

Pulsed Drain Currentmax Idm

670A

Radyasyon Dayanımı

No

Terminal

Through Hole

Contact Plating

Tin

Kılıf / Paket

TO-220-3

Turn Off Delay Time

78 ns

Gate Charge Qg Max Vgs

210nC @ 10V

Drain To Source Breakdown Voltage

100V

Ambalaj

Tube

Number Of Elements

1

Seri

HEXFET®

Vgsth Max Id

4V @ 250μA

Uzunluk

10.66mm

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Yükseklik

16.51mm

Turn On Delay Time

25 ns

Element Configuration

Single

Power Dissipation

370W

Dual Supply Voltage

100V

Rise Time

67ns

Montaj

Through Hole

Continuous Drain Current Id

180A

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE