IRFB4110GPBF

Teknik Özellikler

Rise Time

67ns

Montaj

Through Hole

Pin Sayısı

3

Continuous Drain Current Id

180A

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

9620pF @ 50V

Gate To Source Voltage Vgs

20V

Reach Svhc

No SVHC

Power Dissipation Max

370W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

4 V

Yayın Yılı

2007

Threshold Voltage

4V

Uzunluk

10.668mm

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Yükseklik

16.51mm

Turn On Delay Time

25 ns

Element Configuration

Single

Power Dissipation

370W

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Rds On Max Id Vgs

4.5m Ω @ 75A, 10V

Current Continuous Drain Id25

120A Tc

Pulsed Drain Currentmax Idm

670A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-220-3

Gate Charge Qg Max Vgs

210nC @ 10V

Turn Off Delay Time

78 ns

Drain To Source Breakdown Voltage

100V

Number Of Elements

1

Ambalaj

Tube

Seri

HEXFET®

Vgsth Max Id

4V @ 250μA

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Vgs Max

±20V