IRFB38N20DPBF

Teknik Özellikler

Fall Time Typ

47 ns

Fabrika Tedarik Süresi

12 Weeks

Kurşunsuz

Lead Free

Genişlik

4.826mm

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fet Type

N-Channel

Montaj Tipi

Through Hole

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Seri

HEXFET®

Vgsth Max Id

5V @ 250μA

Number Of Elements

1

Ambalaj

Tube

Gate Charge Qg Max Vgs

91nC @ 10V

Turn Off Delay Time

29 ns

Drain To Source Breakdown Voltage

200V

Direnç

54Ohm

Kılıf / Paket

TO-220-3

Contact Plating

Tin

Radyasyon Dayanımı

No

Transistor Application

SWITCHING

Rds On Max Id Vgs

54m Ω @ 26A, 10V

Current Continuous Drain Id25

43A Tc

Dual Supply Voltage

200V

Power Dissipation

320W

Case Connection

DRAIN

Yükseklik

9.017mm

Turn On Delay Time

16 ns

Element Configuration

Single

Avalanche Energy Rating Eas

460 mJ

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.668mm

Nominal Vgs

5 V

Yayın Yılı

2002

Recovery Time

240 ns

Threshold Voltage

5V

Akım Değeri

38A

Reach Svhc

No SVHC