IRFB3607PBF

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

3070pF @ 50V

Gate To Source Voltage Vgs

20V

Reach Svhc

No SVHC

Power Dissipation Max

140W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

4 V

Yayın Yılı

2008

Recovery Time

50 ns

Threshold Voltage

4V

Rise Time

110ns

Montaj

Through Hole

Pin Sayısı

3

Continuous Drain Current Id

80A

Operating Mode

ENHANCEMENT MODE

Power Dissipation

140W

Dual Supply Voltage

75V

Uzunluk

10.6426mm

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Yükseklik

9.017mm

Turn On Delay Time

16 ns

Element Configuration

Single

Kılıf / Paket

TO-220-3

Gate Charge Qg Max Vgs

84nC @ 10V

Turn Off Delay Time

43 ns

Drain To Source Breakdown Voltage

75V

Direnç

9MOhm

Number Of Elements

1

Ambalaj

Tube

Seri

HEXFET®

Vgsth Max Id

4V @ 100μA

Transistor Application

SWITCHING

Rds On Max Id Vgs

9m Ω @ 46A, 10V

Current Continuous Drain Id25

80A Tc

Radyasyon Dayanımı

No

Terminal

Through Hole

Contact Plating

Tin