IRFB3307PBF

Teknik Özellikler

Avalanche Energy Rating Eas

270 mJ

Drive Voltage Max Rds On Min Rds On

10V

Yükseklik

4.82mm

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

26 ns

Uzunluk

10.6426mm

Dual Supply Voltage

75V

Power Dissipation

200W

Drain Currentmax Abs Id

75A

Rise Time

120ns

Montaj

Through Hole

Pin Sayısı

3

Continuous Drain Current Id

130A

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Power Dissipation Max

200W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2004

Nominal Vgs

4 V

Threshold Voltage

4V

Akım Değeri

130A

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Voltage Rated Dc

75V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

5150pF @ 50V

Lead Pitch

2.54mm

Fet Type

N-Channel

Montaj Tipi

Through Hole

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

63 ns

Genişlik

4.826mm

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB