IRFB3206GPBF

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

210A

Pin Sayısı

3

Pulsed Drain Currentmax Idm

840A

Montaj

Through Hole

Rise Time

82ns

Rds On Max Id Vgs

3m Ω @ 75A, 10V

Current Continuous Drain Id25

120A Tc

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Drain Currentmax Abs Id

120A

Gate To Source Voltage Vgs

20V

Direnç

3MOhm

Input Capacitance Ciss Max Vds

6540pF @ 50V

Drain To Source Breakdown Voltage

60V

Gate Charge Qg Max Vgs

170nC @ 10V

Turn Off Delay Time

55 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3

Terminal Sayısı

3

Vgsth Max Id

4V @ 150μA

Yayın Yılı

2009

Seri

HEXFET®

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Tube

Uzunluk

10.668mm

Vgs Max

±20V

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Element Configuration

Single

Turn On Delay Time

19 ns

Yükseklik

16.51mm

Case Connection

DRAIN

Montaj Tipi

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

170 mJ