IRFB3077PBF

Teknik Özellikler

Montaj Tipi

Through Hole

Fet Type

N-Channel

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Fall Time Typ

95 ns

Fabrika Tedarik Süresi

12 Weeks

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Kurşunsuz

Lead Free

Genişlik

4.82mm

Terminal

Through Hole

Radyasyon Dayanımı

No

Pulsed Drain Currentmax Idm

850A

Rds On Max Id Vgs

3.3m Ω @ 75A, 10V

Current Continuous Drain Id25

120A Tc

Transistor Application

SWITCHING

Vgsth Max Id

4V @ 250μA

Seri

HEXFET®

Number Of Elements

1

Ambalaj

Tube

Drain To Source Breakdown Voltage

75V

Gate Charge Qg Max Vgs

220nC @ 10V

Turn Off Delay Time

69 ns

Kılıf / Paket

TO-220-3

Element Configuration

Single

Turn On Delay Time

25 ns

Yükseklik

9.02mm

Case Connection

DRAIN

Avalanche Energy Rating Eas

200 mJ

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.668mm

Dual Supply Voltage

75V

Power Dissipation

370W

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

210A

Montaj

Through Hole

Rise Time

87ns

Recovery Time

63 ns