IRFB3004PBF

Teknik Özellikler

Yayın Yılı

2008

Seri

HEXFET®

Threshold Voltage

4V

Vgsth Max Id

4V @ 250μA

Reach Svhc

No SVHC

Power Dissipation Max

380W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Tube

Gate Charge Qg Max Vgs

240nC @ 10V

Turn Off Delay Time

90 ns

Gate To Source Voltage Vgs

20V

Direnç

1.75MOhm

Input Capacitance Ciss Max Vds

9200pF @ 25V

Drain To Source Breakdown Voltage

40V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

Contact Plating

Tin

Radyasyon Dayanımı

No

Pin Sayısı

3

Continuous Drain Current Id

340A

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

195A Tc

Rds On Max Id Vgs

1.75m Ω @ 195A, 10V

Montaj

Through Hole

Rise Time

220ns

Transistor Application

SWITCHING

Fall Time Typ

130 ns

Fabrika Tedarik Süresi

12 Weeks

Genişlik

4.826mm

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Power Dissipation

380W

Jedec95 Code

TO-220AB

Yükseklik

9.017mm

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

23 ns