IRF9Z34NSTRLPBF

Teknik Özellikler

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

41 ns

Kurşunsuz

Contains Lead, Lead Free

Genişlik

9.65mm

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

Fet Type

P-Channel

Montaj Tipi

Surface Mount

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Jesd30 Code

R-PSSO-G2

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Seri

HEXFET®

Vgsth Max Id

4V @ 250μA

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Delay Time

30 ns

Gate Charge Qg Max Vgs

35nC @ 10V

Number Of Channels

1

Direnç

100mOhm

Drain To Source Breakdown Voltage

-55V

Radyasyon Dayanımı

No

Tepe Reflow Süresi (maks. sn)

30

Rds On Max Id Vgs

100m Ω @ 10A, 10V

Current Continuous Drain Id25

19A Tc

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

68A

Dual Supply Voltage

55V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Power Dissipation

68W

Drive Voltage Max Rds On Min Rds On

10V

Yükseklik

4.83mm

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

13 ns

Uzunluk

10.668mm

Reach Svhc

No SVHC

Power Dissipation Max

3.8W Ta 68W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)