IRF9Z34NPBF

Teknik Özellikler

Seri

HEXFET®

Vgsth Max Id

4V @ 250μA

Ambalaj

Tube

Number Of Elements

1

Turn Off Delay Time

30 ns

Gate Charge Qg Max Vgs

35nC @ 10V

Direnç

100mOhm

Drain To Source Breakdown Voltage

-55V

Kılıf / Paket

TO-220-3

Terminal

Through Hole

Contact Plating

Tin

Radyasyon Dayanımı

No

Tepe Reflow Süresi (maks. sn)

30

Pulsed Drain Currentmax Idm

68A

Rds On Max Id Vgs

100m Ω @ 10A, 10V

Current Continuous Drain Id25

19A Tc

Transistor Application

SWITCHING

Fall Time Typ

41 ns

Fabrika Tedarik Süresi

12 Weeks

Kurşunsuz

Lead Free

Genişlik

4.69mm

Tepe Reflow Sıcaklığı (°C)

250

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Fet Type

P-Channel

Montaj Tipi

Through Hole

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Yayın Yılı

1997

Nominal Vgs

-4 V

Recovery Time

82 ns

Drain To Source Voltage Vdss

55V

Threshold Voltage

-4V

Akım Değeri

-19A

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

68W Tc

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V