IRF9Z24NPBF

Teknik Özellikler

Fet Type

P-Channel

Montaj Tipi

Through Hole

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Fall Time Typ

37 ns

Fabrika Tedarik Süresi

12 Weeks

Kurşunsuz

Lead Free

Genişlik

4.69mm

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Terminal

Through Hole

Contact Plating

Tin

Radyasyon Dayanımı

No

Pulsed Drain Currentmax Idm

48A

Rds On Max Id Vgs

175m Ω @ 7.2A, 10V

Current Continuous Drain Id25

12A Tc

Transistor Application

SWITCHING

Seri

HEXFET®

Vgsth Max Id

4V @ 250μA

Ambalaj

Tube

Number Of Elements

1

Turn Off Delay Time

23 ns

Gate Charge Qg Max Vgs

19nC @ 10V

Direnç

175mOhm

Drain To Source Breakdown Voltage

-55V

Kılıf / Paket

TO-220-3

Yükseklik

15.24mm

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

13 ns

Avalanche Energy Rating Eas

96 mJ

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.5156mm

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Dual Supply Voltage

-55V

Power Dissipation

45W

Continuous Drain Current Id

-12A

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE