IRF9540NSTRLPBF

Teknik Özellikler

Current Continuous Drain Id25

23A Tc

Rds On Max Id Vgs

117m Ω @ 14A, 10V

Transistor Application

SWITCHING

Gerilim

100V

Contact Plating

Tin

Terminal

SMD/SMT

Tepe Reflow Süresi (maks. sn)

30

Radyasyon Dayanımı

No

Direnç

117mOhm

Drain To Source Breakdown Voltage

-100V

Turn Off Delay Time

40 ns

Gate Charge Qg Max Vgs

110nC @ 10V

Number Of Channels

1

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgsth Max Id

4V @ 250μA

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Fet Type

P-Channel

ECCN Kodu

EAR99

Kurşunsuz

Contains Lead

Genişlik

9.65mm

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

51 ns

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

-23A

Pin Sayısı

3

Rise Time

67ns

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

1450pF @ 25V

Terminal Formu

GULL WING

Voltage Rated Dc

-100V

Max Junction Temperature Tj

150°C