IRF9393TRPBF

Teknik Özellikler

Power Dissipation

2.5W

ECCN Kodu

EAR99

Genişlik

3.9878mm

Fall Time Typ

49 ns

Fabrika Tedarik Süresi

12 Weeks

Vgs Max

±25V

Uzunluk

4.9784mm

Transistor Element Material

SILICON

Parça Durumu

Active

Turn On Delay Time

16 ns

Element Configuration

Single

Yükseklik

1.4986mm

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V 20V

Fet Type

P-Channel

Input Capacitance Ciss Max Vds

1110pF @ 25V

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

-30V

Gate To Source Voltage Vgs

25V

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

38nC @ 10V

Turn Off Delay Time

55 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Terminal Sayısı

8

Vgsth Max Id

2.4V @ 25μA

Drain To Source Voltage Vdss

30V

Seri

HEXFET®

Yayın Yılı

2010

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Power Dissipation Max

2.5W Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

75A

Pin Sayısı

8

Continuous Drain Current Id

9.2A