IRF9383MTRPBF

Teknik Özellikler

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Turn On Delay Time

29 ns

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Fet Type

P-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

ECCN Kodu

EAR99

Power Dissipation

2.1W

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.0029Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

110 ns

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

22A

Pin Sayısı

7

Current Continuous Drain Id25

22A Ta 160A Tc

Rds On Max Id Vgs

2.9m Ω @ 22A, 10V

Montaj

Surface Mount

Rise Time

160ns

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

20V

Drain To Source Breakdown Voltage

-30V

Input Capacitance Ciss Max Vds

7305pF @ 15V

Turn Off Delay Time

115 ns

Gate Charge Qg Max Vgs

130nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Çalışma Sıcaklığı

-40°C~150°C TJ

Terminal Sayısı

3

Kılıf / Paket

DirectFET™ Isometric MX

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

2.4V @ 150μA

Drain To Source Voltage Vdss

30V

Yayın Yılı

2011

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.1W Ta 113W Tc