IRF9332TRPBF

Teknik Özellikler

Gate Charge Qg Max Vgs

41nC @ 10V

Turn Off Delay Time

73 ns

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

1270pF @ 25V

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

-30V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Terminal Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2010

Seri

HEXFET®

Vgsth Max Id

2.4V @ 25μA

Drain To Source Voltage Vdss

30V

Power Dissipation Max

2.5W Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Pin Sayısı

8

Continuous Drain Current Id

9.8A

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Rise Time

47ns

Rds On Max Id Vgs

17.5m Ω @ 9.8A, 10V

Current Continuous Drain Id25

9.8A Ta

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Power Dissipation

2.5W

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

58 ns

Fabrika Tedarik Süresi

12 Weeks

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Turn On Delay Time

15 ns

Fet Type

P-Channel