IRF9321TRPBF

Teknik Özellikler

Radyasyon Dayanımı

No

Rds On Max Id Vgs

7.2m Ω @ 15A, 10V

Current Continuous Drain Id25

15A Ta

Transistor Application

SWITCHING

Vgsth Max Id

2.4V @ 50μA

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

DUAL

Direnç

7.2MOhm

Drain To Source Breakdown Voltage

-30V

Gate Charge Qg Max Vgs

98nC @ 10V

Turn Off Delay Time

185 ns

Number Of Channels

1

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Montaj Tipi

Surface Mount

Fet Type

P-Channel

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Fall Time Typ

145 ns

Fabrika Tedarik Süresi

12 Weeks

ECCN Kodu

EAR99

Genişlik

3.9878mm

Kurşunsuz

Lead Free

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

-15A

Pin Sayısı

8

Montaj

Surface Mount

Rise Time

79ns

Drain To Source Voltage Vdss

30V

Threshold Voltage

-1.8V

Yayın Yılı

2008

Nominal Vgs

-1.8 V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta

JESD-609 Kodu

e3

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

20V