IRF8302MTRPBF

Teknik Özellikler

Drain To Source Breakdown Voltage

30V

Turn Off Delay Time

20 ns

Gate Charge Qg Max Vgs

53nC @ 4.5V

Number Of Channels

1

Kılıf / Paket

DirectFET™ Isometric MX

Vgsth Max Id

2.35V @ 150μA

Seri

HEXFET®

Manufacturer Package Identifier

MG-WDSON-5

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

BOTTOM

Jesd30 Code

R-XBCC-N3

Pulsed Drain Currentmax Idm

250A

Rds On Max Id Vgs

1.8m Ω @ 31A, 10V

Current Continuous Drain Id25

31A Ta 190A Tc

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

15 ns

Fabrika Tedarik Süresi

12 Weeks

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

6030pF @ 15V

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Max Junction Temperature Tj

150°C

Çalışma Sıcaklığı

-40°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Threshold Voltage

1.35V

Yayın Yılı

2006

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.8W Ta 104W Tc

JESD-609 Kodu

e1

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

31A