IRF8301MTRPBF

Teknik Özellikler

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Avalanche Energy Rating Eas

260 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

20 ns

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Power Dissipation

2.8W

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

17 ns

Additional Feature

ULTRA LOW RESISTANCE

Current Continuous Drain Id25

34A Ta 192A Tc

Rds On Max Id Vgs

1.5m Ω @ 32A, 10V

Montaj

Surface Mount

Rise Time

30ns

Transistor Application

SWITCHING

Pin Sayısı

7

Continuous Drain Current Id

34A

Pulsed Drain Currentmax Idm

250A

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

DirectFET™ Isometric MT

Terminal Sayısı

3

Çalışma Sıcaklığı

-40°C~150°C TJ

Gate Charge Qg Max Vgs

77nC @ 4.5V

Turn Off Delay Time

25 ns

Number Of Channels

1

Gate To Source Voltage Vgs

20V

Drain To Source Breakdown Voltage

30V

Input Capacitance Ciss Max Vds

6140pF @ 15V

Jesd30 Code

R-XBCC-N3

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.8W Ta 89W Tc