IRF7853TRPBF

Teknik Özellikler

Continuous Drain Current Id

8.3A

Pin Sayısı

8

Pulsed Drain Currentmax Idm

66A

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

8.3A Ta

Rds On Max Id Vgs

18m Ω @ 8.3A, 10V

Rise Time

6.6ns

Montaj

Surface Mount

Transistor Application

SWITCHING

Contact Plating

Tin

Radyasyon Dayanımı

No

Turn Off Delay Time

26 ns

Gate Charge Qg Max Vgs

39nC @ 10V

Direnç

18MOhm

Gate To Source Voltage Vgs

20V

Drain To Source Breakdown Voltage

100V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

1640pF @ 25V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Terminal Sayısı

8

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2006

Seri

HEXFET®

Vgsth Max Id

4.9V @ 100μA

Reach Svhc

Unknown

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta

Number Of Elements

1

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Uzunluk

4.9784mm

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Yükseklik

1.4986mm

Turn On Delay Time

13 ns

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount