IRF7807ZTR

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Vgs Max

±20V

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Obsolete

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.0138Ohm

Jedec95 Code

MS-012AA

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Abs Id

11A

Tepe Reflow Süresi (maks. sn)

30

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30V

Transistor Application

SWITCHING

Current Continuous Drain Id25

11A Ta

Rds On Max Id Vgs

13.8m Ω @ 11A, 10V

Seri

HEXFET®

Yayın Yılı

2005

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.25V @ 250μA

Jesd30 Code

R-PDSO-G8

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

11nC @ 4.5V

Input Capacitance Ciss Max Vds

770pF @ 15V

Terminal Formu

GULL WING

RoHS Durumu

Non-RoHS Compliant

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Terminal Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ