IRF7807APBF

Teknik Özellikler

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate Charge Qg Max Vgs

17nC @ 5V

Turn Off Delay Time

25 ns

Direnç

25MOhm

Drain To Source Breakdown Voltage

30V

Row Spacing

6.3 mm

Terminal Pozisyonu

DUAL

Number Of Elements

1

Ambalaj

Tube

Seri

HEXFET®

Vgsth Max Id

1V @ 250μA

Current Continuous Drain Id25

8.3A Ta

Rds On Max Id Vgs

25m Ω @ 7A, 4.5V

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

66A

Radyasyon Dayanımı

No

Kurşunsuz

Contains Lead, Lead Free

Genişlik

3.9878mm

Fall Time Typ

6 ns

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Vgs Max

±12V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

RoHS Durumu

RoHS Compliant

Terminal Sayısı

8

Voltage Rated Dc

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

12V

Terminal Formu

GULL WING

Reach Svhc

No SVHC

Power Dissipation Max

2.5W Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2004

Nominal Vgs

1 V

Threshold Voltage

1V

Akım Değeri

6.6A

Montaj

Surface Mount

Rise Time

17ns

Continuous Drain Current Id

8.3A