IRF7799L2TRPBF

Teknik Özellikler

Radyasyon Dayanımı

No

Drain Currentmax Abs Id

375A

Montaj

Surface Mount

Rise Time

33.5ns

Rds On Max Id Vgs

38m Ω @ 21A, 10V

Current Continuous Drain Id25

375A Tc

Transistor Application

SWITCHING

Continuous Drain Current Id

6.6A

Pin Sayısı

11

Pulsed Drain Currentmax Idm

140A

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-XBCC-N9

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

4.3W Ta 125W Tc

Terminal Pozisyonu

BOTTOM

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Yayın Yılı

2009

Seri

HEXFET®

Vgsth Max Id

5V @ 250μA

Threshold Voltage

4V

RoHS Durumu

RoHS Compliant

Kılıf / Paket

DirectFET™ Isometric L8

Terminal Sayısı

9

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

165nC @ 10V

Turn Off Delay Time

73.9 ns

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

6714pF @ 25V

Drain To Source Breakdown Voltage

250V

Avalanche Energy Rating Eas

325 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Yükseklik

508μm

Case Connection

DRAIN

Turn On Delay Time

36.3 ns

Parça Durumu

Obsolete

Transistor Element Material

SILICON