IRF7779L2TRPBF

Teknik Özellikler

Uzunluk

9.144mm

Turn On Delay Time

16 ns

Yükseklik

508μm

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

270 mJ

Power Dissipation

125W

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

11

Continuous Drain Current Id

11A

Montaj

Surface Mount

Rise Time

19ns

Drain Currentmax Abs Id

67A

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

6660pF @ 25V

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

9

Threshold Voltage

4V

Yayın Yılı

2009

Power Dissipation Max

3.3W Ta 125W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e1

Reach Svhc

No SVHC

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Fet Type

N-Channel

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

Genişlik

7.1mm

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

12 ns

Fabrika Tedarik Süresi

12 Weeks

Pulsed Drain Currentmax Idm

270A

Current Continuous Drain Id25

375A Tc

Rds On Max Id Vgs

11m Ω @ 40A, 10V

Transistor Application

SWITCHING