IRF7769L1TRPBF

Teknik Özellikler

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

41 ns

Configuration

Single

ECCN Kodu

EAR99

Power Dissipation

3.3W

Drainsource On Resistancemax

0.0035Ohm

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

260 mJ

Turn On Delay Time

44 ns

Case Connection

DRAIN

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Power Dissipation Max

3.3W Ta 125W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Jesd30 Code

R-XBCC-N3

Vgsth Max Id

4V @ 250μA

Drain To Source Voltage Vdss

100V

Yayın Yılı

2013

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

9

Kılıf / Paket

DirectFET™ Isometric L8

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

11560pF @ 25V

Turn Off Delay Time

92 ns

Gate Charge Qg Max Vgs

300nC @ 10V

Radyasyon Dayanımı

No

Drain Currentmax Abs Id

375A

Current Continuous Drain Id25

20A Ta 124A Tc

Rds On Max Id Vgs

3.5m Ω @ 74A, 10V

Rise Time

32ns

Montaj

Surface Mount

Transistor Application

SWITCHING